doping element

The key technique is precisely to control the doping element.

技术的关键在于掺杂精度的精确控制.

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

Effect of Doping K Element on Properties of Lithium Zirconate as CO_2-absorbent

K元素的掺杂对锆酸锂材料吸收CO2性能的影响

The effects were reviewed by changing the doping element, doping consent and calcination temperature. Characterizations of micro-structure and UV-vis absorption of modified-TiO2 photocatalyst were analysed using XRD, SEM, UV-vis.

通过改变掺杂元素、掺杂量和焙烧温度等考察对TiO2光催性的影响，同时利用XRD、SEM、UV-Vis等分析手段，表征了改性TiO2光催化剂微观结构和光吸收能力。

The effects of doping element potassium on the microstructure and properties of doped molybdenum wirer were investigated by electron microscope.

采用电子显微镜研究了掺杂元素钾对于掺杂钼丝显微组织和性能的影响。

Preliminary results have been achieved to eliminate these striations by doping with some unharmful element such as borons ( B2O3) into the vacancies of BNN crystals.

实验表明，可以采用掺入少量无害元素，如硼（B2O3）填占BNN晶体的空位结构以克服生长条纹，取得了初步成效。

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

But the modulation mechanisms are strongly dependent on the doping element and metal.

但是，调控机理很强地依赖于掺杂元素及金属的类型。