偏压旁路电容;
This paper presents a capacitance method which is based on that the resistivity of the material with uniform doping has an one-to one correspondence relation to the barrier capacitance when a junction at fixed biasing voltage is formed.
本文介绍一种基于固定偏压下,均匀掺杂材料的电阻率与其形成结时的势垒电容相对应的电容测量法。
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